| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 4 G 1 S 2 1 2 3 1 2 H7N0307LS 3 3 H7N0307LM 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD H7N0307LD |
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Hitachi |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H |
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Hitachi |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H |
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Hitachi |
Silicon N-Channel MOSFET • Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source H7N0307AB Absolute Maximum Ratings (Ta = 25°C) Item Drain |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220CFM ADE-208-1570A(Z) 2nd. Edition Aug. 2002 D G S 123 1. Gate 2. Drain 3. Source H7N0308CF Absolute Maximum Ra |
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Hitachi |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H |
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Desde 2024. D4U Semiconductor.
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