| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SC5252 • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.15 µsec(typ.) • Isolated package TO –3P •FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 www.DataSheet4U.com 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collecto |
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Hitachi |
Silicon NPN Transistor • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base volta |
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Hitachi Semiconductor |
2SC5251 • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec (typ) • Isolated package TO-3P •FM (N) Outline TO-3PFM (N) 1 2 3 1. Base 2. Collector 3. Emitter Preliminary 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collector |
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Hitachi Semiconductor |
Silicon NPN Transistor |
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Hitachi |
2SC5237 • Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Outline TO-126FM 123 1. Emitter 2. Collector 3. Base Free Datasheet http: |
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Hitachi Semiconductor |
2SC5247 • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Free Datasheet http://www.datasheet4u.net/ 2SC5247 Absolute Maximum |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base vol |
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Hitachi Semiconductor |
NPN TRANSISTOR • High voltage large current operation. VCEO = 80 V, IC = 300 mA • High fT . fT = 1.4 GHz • Small output capacitance. Cob = 3 pF 2SC5225 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to |
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Hitachi Semiconductor |
Silicon NPN Transistor • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base v |
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Hitachi Semiconductor |
Silicon NPN Transistor • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base v |
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Hitachi Semiconductor |
Silicon NPN Transistor |
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Hitachi Semiconductor |
Silicon NPN Transistor • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec (typ) • Isolated package TO-3P •FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base volt |
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Hitachi Semiconductor |
NPN TRANSISTOR • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.15 µsec(typ.) • Isolated package TO –3P •FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Col |
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Hitachi |
Silicon NPN Triple Diffused Planar Transistor • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P •FM Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 Free Datasheet http://www.datasheet4u. |
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Hitachi |
Silicon NPN Transistor • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base volta |
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Hitachi Semiconductor |
NPN TRANSISTOR |
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Hitachi Semiconductor |
NPN TRANSISTOR • High brakedown voltage V(BR)CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Colle |
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Hitachi |
Silicon NPN Epitaxial Type Transistor • Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 Free Datasheet |
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Desde 2024. D4U Semiconductor.
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