| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
Silicon NPN Epitaxial • Excellent high frequency characteristics fT = 300 MHz typ • High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complimentary pair of 2SA1889 TO –126FM 123 1. Emitter 2. Coll |
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Hitachi Semiconductor |
Silicon NPN Triple Diffused Planar • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collec |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25°C) Item Coll |
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Hitachi |
2SC5023 • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier TO –126FM 123 1. Emitter 2. Collector 3. Base Absolute Maximum |
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Hitachi |
2SC5068A • High breakdown voltage VCBO = 1500 V, IC = 12 A • High speed switching tf = 0.2 µsec(typ) TO –3PFM (N) 1 2 3 1. Base 2. Collector 3. Emitter www.DataSheet4U.com 2SC5068A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Colle |
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Hitachi Semiconductor |
2SC5022 • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.DataSheet.co.kr 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www.DataSheet4U.net/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Co |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5049 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base vo |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK –4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25°C) Item Colle |
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Hitachi |
Silicon NPN Triple Diffused Planar Transistor • High breakdown voltage VCBO = 1500 V, IC = 12 A • High speed switching tf = 0.2 µsec(typ) TO –3PFM (N) 1 2 3 1. Base 2. Collector 3. Emitter www.DataSheet4U.com 2SC5068A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Colle |
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Hitachi Semiconductor |
Silicon NPN Triple Diffused Planar Transistor • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collec |
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Hitachi |
Silicon NPN Transistor • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter |
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Hitachi Semiconductor |
NPN TRANSISTOR • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector curre |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5050 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base vo |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5051 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5078 Absolute Maximum Ratings (Ta = 25°C) Item Collec |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline CMPAK –4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5079 Absolute Maximum Ratings (Ta = 25°C) Item Collect |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratin |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor • Excellent high frequency characteristics fT = 300 MHz typ • High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complimentary pair of 2SA1889 TO –126FM 123 1. Emitter 2. Coll |
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Desde 2024. D4U Semiconductor.
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