No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
Silicon PNP Transistor = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –10 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA V(BR)CBO –100 — V(BR)CEO –100 — ICBO — — — — — — — — 150 1.8 –120 — –120 — — — 250 125 — — — — — — 150 1.8 –140 — –140 — — — |
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Hitachi |
2SB715 O — — –0.5 — — — — — — µA VCB = –80 V, IE = 0 — — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0 DC current transfer ratio hFE1*1 250 — 800 250 — 800 250 — 500 VCE = –12 V, IC = –2 mA hFE2 125 — — 125 — — 125 — — VCE = –12 V, IC = –10 mA Base to |
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Hitachi |
2SB716A O — — –0.5 — — — — — — µA VCB = –80 V, IE = 0 — — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0 DC current transfer ratio hFE1*1 250 — 800 250 — 800 250 — 500 VCE = –12 V, IC = –2 mA hFE2 125 — — 125 — — 125 — — VCE = –12 V, IC = –10 mA Base to |
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Hitachi |
Silicon PNP Transistor |
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Hitachi |
Silicon PNP Transistor |
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Hitachi Semiconductor |
Silicon PNP Transistor = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –10 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA V(BR)CBO –100 — V(BR)CEO –100 — ICBO — — — — — — — — 150 1.8 –120 — –120 — — — 250 125 — — — — — — 150 1.8 –140 — –140 — — — |
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Hitachi Semiconductor |
Silicon PNP Transistor |
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Hitachi Semiconductor |
2SB716 O — — –0.5 — — — — — — µA VCB = –80 V, IE = 0 — — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0 DC current transfer ratio hFE1*1 250 — 800 250 — 800 250 — 500 VCE = –12 V, IC = –2 mA hFE2 125 — — 125 — — 125 — — VCE = –12 V, IC = –10 mA Base to |
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Hitachi Semiconductor |
Silicon PNP Transistor = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –10 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA V(BR)CBO –100 — V(BR)CEO –100 — ICBO — — — — — — — — 150 1.8 –120 — –120 — — — 250 125 — — — — — — 150 1.8 –140 — –140 — — — |
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Hitachi Semiconductor |
Silicon PNP Transistor |
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