| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Harris |
N-Channel Power MOSFETs • 34A and 40A, 60V and 100V • rDS(ON) = 0.055Ω and 0.08Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
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Harris Semiconductor |
(RFP8N18 / RFP8N20) N-Channel Enhancement Mode Power Field Effect Transistors |
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Harris |
N-Channel Power MOSFETs • 34A and 40A, 60V and 100V • rDS(ON) = 0.055Ω and 0.08Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
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Harris |
N-Channel Power MOSFETs • 34A and 40A, 60V and 100V • rDS(ON) = 0.055Ω and 0.08Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
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Harris |
N-Channel Power MOSFETs • 34A and 40A, 60V and 100V • rDS(ON) = 0.055Ω and 0.08Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
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Harris Semiconductor |
(RFP10N12 / RFP10N15) N-Channel Power MOSFET |
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Harris Semiconductor |
(RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET |
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Harris |
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs • 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG |
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Harris |
P-Channel Power MOSFET Description • 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Ordering Information These products are P-Channel power M |
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Harris Semiconductor |
(RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET |
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Harris Semiconductor |
(RFP8N18 / RFP8N20) N-Channel Enhancement Mode Power Field Effect Transistors |
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Harris |
N-Channel Enhancement-Mode Power MOSFETs • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE Descr |
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Harris |
N-Channel Enhancement-Mode Power MOSFETs • 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using |
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Harris |
P-Channel Enhancement-Mode Power MOSFET • 30A, 50V • rDS(ON) = 0.065Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are |
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Harris Semiconductor |
P-Channel Power MOSFETs |
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Harris Semiconductor |
(RFP10N12 / RFP10N15) N-Channel Power MOSFET |
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Harris Corporation |
(RFP8P08 / RFP8P10) P-CHANNEL POWER MOSFETS |
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Harris Corporation |
(RFP8P08 / RFP8P10) P-CHANNEL POWER MOSFETS |
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Harris |
N-Channel MOSFET • 70A, 30V • rDS(ON) = 0.010Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Description The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs a |
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HARRIS |
Avalanche Rated N-Channel Enhancement-Mode Power MOSFET Packaging • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE • UIS Rating Curve • +175oC Operating Temperature Description The RFD14N05, RFD1 |
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Desde 2024. D4U Semiconductor.
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