No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Harris |
700V - 1000V Ultrafast Diodes • Ultrafast with Soft Recovery Characteristic (tRR < 75ns) • +175 C Rated Junction Temperature • Reverse Voltage Up to 1000V • Avalanche Energy Rated o Applications • Switching Power Supply • Power Switching Circuits • General Purpose Symbol K Des |
|
|
|
Harris |
Ultrafast Dual Diodes |
|
|
|
Harris |
700V - 1000V Ultrafast Diodes • Ultrafast with Soft Recovery Characteristic (tRR < 75ns) • +175 C Rated Junction Temperature • Reverse Voltage Up to 1000V • Avalanche Energy Rated o Applications • Switching Power Supply • Power Switching Circuits • General Purpose Symbol K Des |
|
|
|
Harris Corporation |
(MUR3010PT - MUR3020PT) Ultrafast Dual Diodes • Ultrafast with Soft Recovery Characteristic (tRR < 30ns) • +175oC Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated Applications • Switching Power Supply • Power Switching Circuits • General Purpose CATHODE (FLANGE) |
|
|
|
Harris Corporation |
(MUR3010PT - MUR3020PT) Ultrafast Dual Diodes • Ultrafast with Soft Recovery Characteristic (tRR < 30ns) • +175oC Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated Applications • Switching Power Supply • Power Switching Circuits • General Purpose CATHODE (FLANGE) |
|
|
|
Harris Corporation |
(MUR3010PT - MUR3020PT) Ultrafast Dual Diodes • Ultrafast with Soft Recovery Characteristic (tRR < 30ns) • +175oC Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated Applications • Switching Power Supply • Power Switching Circuits • General Purpose CATHODE (FLANGE) |
|
|
|
Harris |
700V - 1000V Ultrafast Diodes • Ultrafast with Soft Recovery Characteristic (tRR < 75ns) • +175 C Rated Junction Temperature • Reverse Voltage Up to 1000V • Avalanche Energy Rated o Applications • Switching Power Supply • Power Switching Circuits • General Purpose Symbol K Des |
|
|
|
Harris |
700V - 1000V Ultrafast Diodes • Ultrafast with Soft Recovery Characteristic (tRR < 75ns) • +175 C Rated Junction Temperature • Reverse Voltage Up to 1000V • Avalanche Energy Rated o Applications • Switching Power Supply • Power Switching Circuits • General Purpose Symbol K Des |
|
|
|
Harris |
Ultrafast Dual Diodes |
|
|
|
Harris |
Ultrafast Dual Diodes |
|