No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hamamatsu Corporation |
PHOTOMULTIPLIER TUBE A/W µA/lm-b — nA ns ns ns mA Gain Anode Dark Current (after 30 min. storage in darkness) Anode Pulse Rise Time Time Response Electron Transit Time Transmit Time Spread Pulse Linearity at 2% Deviation VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE El |
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Hamamatsu Corporation |
PHOTOMULTlPLlER TUBE orage in darkness) Anode Pulse Rise Time Time Response Electron Transit Time NOTE: Anode characteristics are measured with the voItage distribution ratio shown below. VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE K Dy1 Dy2 Dy3 Electrodes Ratio 2 1 |
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Hamamatsu Corporation |
PHOTOMULTIPLIER TUBE High Quantum Efficiency ..................................... 14% at 254nm Typ. Ruggedized, Low Profile Structure ..................... 20g's vibration 43mm in bulb length GENERAL Parameter Spectral Response Wavelength of Maximum Response Material P |
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