| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hynix Semiconductor |
512Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) - 1.2V(min) data retention • Standard pin configuration - 48-FBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL 15 15 Temperature |
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Hynix Semiconductor |
512Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) - 1.2V(min) data retention • Standard pin configuration - 48-uBGA Operation Current/Icc(mA) 4 4 Standby Current(uA) LL SL 25 8 25 8 Temp |
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Hynix Semiconductor |
128K x 16bit full CMOS SRAM |
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HY |
SURFACE MOUNT GLASS PASSIVATED RECTIFIERS ● Low cost ● Diffused junction ●Ultra fast switching for high efficiency ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 SMA .065(1.65) .049(1.25) .181(4.60) .1 |
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Hynix Semiconductor |
64Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) -. 1.2V(min) data retention • Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62UF16101C 2.7~3.3 55/70/85/100 |
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HY |
SURFACE MOUNT GLASS PASSIVATED RECTIFIERS ● Low cost ● Diffused junction ●Ultra fast switching for high efficiency ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 SMA .065(1.65) .049(1.25) .181(4.60) .1 |
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Hynix Semiconductor |
512Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) - 1.2V(min) data retention • Standard pin configuration - 48-fBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL 15 15 Temperature |
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Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
64Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) -. 1.2V(min) data retention • Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62UF16101C 2.7~3.3 55/70/85/100 |
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Hynix Semiconductor |
64Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) -. 1.2V(min) data retention • Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62UF16101C 2.7~3.3 55/70/85/100 |
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Hynix Semiconductor |
64Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) -. 1.2V(min) data retention • Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62UF16101C 2.7~3.3 55/70/85/100 |
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Hynix Semiconductor |
64Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) -. 1.2V(min) data retention • Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62UF16101C 2.7~3.3 55/70/85/100 |
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HY |
SURFACE MOUNT GLASS PASSIVATED RECTIFIERS ● Low cost ● Diffused junction ●Ultra fast switching for high efficiency ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 SMA .065(1.65) .049(1.25) .181(4.60) .1 |
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HY |
SURFACE MOUNT GLASS PASSIVATED RECTIFIERS ● Low cost ● Diffused junction ●Ultra fast switching for high efficiency ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 SMA .065(1.65) .049(1.25) .181(4.60) .1 |
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Hynix Semiconductor |
256K x 16bit full CMOS SRAM |
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Hynix Semiconductor |
256K x 16bit full CMOS SRAM |
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Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
256Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 48-ball uBGA Product No. Voltage (V) Speed (ns) Operation Current/Icc(mA) 5 5 HY62UF16 |
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Hynix Semiconductor |
512Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) - 1.2V(min) data retention • Standard pin configuration - 48-uBGA Operation Current/Icc(mA) 4 4 Standby Current(uA) LL SL 25 8 25 8 Temp |
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Hynix Semiconductor |
512Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) - 1.2V(min) data retention • Standard pin configuration - 48-FBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL 15 15 Temperature |
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Desde 2024. D4U Semiconductor.
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