| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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HVGT |
High Voltage Silicon Rectifier Diode 1. High overload surge capability. 2. Avalanche Characteristic. 3. Medium Current, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-721 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATI |
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HVGT |
High Voltage Silicon Rectifier Diode 1. High overload surge capability. 2. Avalanche Characteristic. 3. Medium Current, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-721 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATI |
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HVGT |
High Voltage Silicon Rectifier Diode 1. High overload surge capability. 2. Avalanche Characteristic. 3. Medium Current, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-721 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATI |
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Desde 2024. D4U Semiconductor.
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