HUAYI HY3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HY3506P	HUAYI	N-Channel MOSFET • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power Manag
2	HY3907W	HUAYI	N-Channel Enhancement Mode MOSFET • 75V/190A RDS(ON) = 3.6 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247A-3L S D G TO-3P-3L Applications  Switching application  Power Manag
3	HY3907A	HUAYI	N-Channel Enhancement Mode MOSFET • 75V/190A RDS(ON) = 3.6 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247A-3L S D G TO-3P-3L Applications  Switching application  Power Manag
4	HY3506B	HUAYI	N-Channel MOSFET • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power Manag