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HOTTECH |
P-Channel MOSFET The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G S Plastic-Encapsulate Mosfets AO |
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HOTTECH |
N-Channel MOSFET The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particul |
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HOTTECH |
N-Channel MOSFET The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOS |
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HOTTECH |
P-Channel MOSFET The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum |
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HOTTECH |
P-Channel MOSFET The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. G AO3407 P-Channel MOSFET D 1.Gate 2.Source 3.Drain SOT-23 S Absolute Maximum |
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HOTTECH |
P-Channel MOSFET The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3403 P-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum R |
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Desde 2024. D4U Semiconductor.
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