| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G |
|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G |
|
|
|
|
HOOYI |
N-Channel MOSFET • 60V/230A RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247-3L S D G TO-3P-3L Applications • Switching application • Power Manage |
|
|
|
|
HOOYI |
N-Channel MOSFET ain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON)* Drain-Source On-state Resistance Diode Characteristics VGS=0V, IDS=250µA VDS=40V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=104A VSD * trr Qrr Diod |
|
|
|
|
HOOYI |
N-Channel MOSFET ain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON)* Drain-Source On-state Resistance Diode Characteristics VGS=0V, IDS=250µA VDS=40V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=104A VSD * trr Qrr Diod |
|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching applica |
|
|
|
|
HOOYI |
N-Channel MOSFET • 30V/290A RDS(ON)= 1.6mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description DS G TO-220FB-3L DS G TO-26 |
|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching applica |
|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching applica |
|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching applica |
|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching applica |
|
|
|
|
HOOYI |
N-Channel MOSFET • 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Manag |
|
|
|
|
HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G |
|
|
|
|
HOOYI |
N-Channel MOSFET |
|
|
|
|
HOOYI |
N-Channel MOSFET • 60V/230A RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247-3L S D G TO-3P-3L Applications • Switching application • Power Manage |
|
|
|
|
HOOYI |
N-Channel MOSFET • 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Manag |
|
|
|
|
HOOYI |
N-Channel MOSFET • 30V/290A RDS(ON)= 1.6mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description DS G TO-220FB-3L DS G TO-26 |
|
|
|
|
HOOYI |
N-Channel MOSFET |
|
|
|
|
HOOYI |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|