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HI-SINCERITY |
Dual N-Channel Enhancement-Mode MOSFET • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Appl |
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Desde 2024. D4U Semiconductor.
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