HGSemi C25 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC2558	HGSemi	HG RF POWER TRANSISTOR
2	2SC2559	HGSemi	Silicon NPN POWER TRANSISTOR
3	2SC2510	HGSemi	Silicon NPN POWER TRANSISTOR ies Equivalent Output Impedance SYMBOL TEST CONDITION V(BR) CEO IC = 100mA, IB = 0 V(BR) CES IC = 100mA, VEB = 0 V (BR) EBO IE = 1mA, IC = 0 h FE VCE = 5V, CI = 10A * C ob V CB = 28V, EI = 0 f = 1MHz Gp Pi ηC IMD V CC = 28V, 1f = 28.000MHz,
4	C2558	HGSemi	HG RF POWER TRANSISTOR
5	C2559	HGSemi	Silicon NPN POWER TRANSISTOR
6	2SC2508	HGSemi	Silicon NPN POWER TRANSISTOR