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Guangdong Kexin Industrial |
MOS Field Effect Transistor Low on-resistance +0.2 9.70-0.2 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ciss : Ciss = 3200 pF TYP. +0.15 0.50-0.15 RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18A) 0.127 |
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Guangdong Kexin Industrial |
MOS Field Effect Transistor 4.5-V drive available Low on-state resistance +0.2 8.7-0.2 RDS(on)1 = 14 m Low gate charge MAX. (VGS = 10 V, ID = 20 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V) Built-in gate protecti |
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Guangdong Kexin Industrial |
N-Channel Silicon MOSFET Low on-resistance. Fast switching speed. Wide SOA (safe operating area). +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Easy to parallel. 2.3 + |
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Guangdong Kexin Industrial |
MOSFET High voltage: VDSS = 200 V Gate voltage rating: RDS(on) = 0.60 30 V +0.2 9.70-0.2 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ci |
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Guangdong Kexin Industrial |
MOSFET High voltage: VDSS = 200 V Gate voltage rating: 30 V +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Low on-state resistance +0.1 0.80-0.1 Low Ciss: Ciss = 390 pF TYP. Built-in gate protec |
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Guangdong Kexin Industrial |
Silicon N-channel Power MOSFET Avalanche energy capacity guaranteed: EAS Gate-source surrender voltage VGSS = High-speed switching: tf = 50 ns No secondary breakdown 20 mJ 30 V guaranteed + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 |
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Guangdong Kexin Industrial |
Silicon N-Channel MOSFET Low on-resistance. Fast switching speed. Wide SOA (safe operating area). +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Easy to parallel. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1. |
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Guangdong Kexin Industrial |
MOSFET 4.5 V drive available Low on-state resistance RDS(on)1 = 18 mÙ MAX. (VGS = 10 V, ID = 18 A) + 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 |
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Guangdong Kexin Industrial |
MOSFET Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) Low on-state resistance RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Avalanche capability ratings Surface mount package availabl |
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Guangdong Kexin Industrial |
MOSFET Gate voltage rating 30 V Low on-state resistance Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.8 |
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Guangdong Kexin Industrial |
MOSFET Low on-state resistance +0.2 9.70-0.2 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 5 V drive available +0.15 0.50-0.15 Low Ciss: Ciss = 1300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolu |
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Guangdong Kexin Industrial |
MOSFET Super low on-state resistance: RDS(on)1 = 125m RDS(on)2 = 148m MAX. (VGS = 10 V, ID = 8A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 +0.15 0.50-0.15 Low Ciss: Ciss = 900 pF TYP. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 |
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Guangdong Kexin Industrial |
Silicon N-channel Power MOSFET Low on-resistance, low Qg High avalanche resistance + 0 .1 1 .2 7 -0 .1 + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absol |
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Guangdong Kexin Industrial |
MOS Field Effect Transistor Low on-state resistance RDS(on)1 = 8.5 m RDS(on)2 = 15 m MAX. (VGS = 10 V, ID = 32 A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Low Ciss: Ciss = 1100 pF TYP. Built-in gate protection diode +0.1 0.80-0.1 +0. |
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Guangdong Kexin Industrial |
MOS Field Effect Transistor Low on-state resistance RDS(on)1 = 5.5 m RDS(on)2 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Low Ciss: Ciss = 2400 pF TYP. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 + |
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Guangdong Kexin Industrial |
Silicon N-Channel MOSFET Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Easily designed drive circuits. +0.2 9.70-0.2 +0.15 0.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.1 0.80-0.1 0.127 m |
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Guangdong Kexin Industrial |
MOSFET 4.5 V drive available Low on-state resistance RDS(on)1 = 12m Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) +0.2 5.28-0.2 +0.1 1.27-0.1 MOSFET TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0 |
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Guangdong Kexin Industrial |
MOS Field Effect Transistor 4.5-V drive available Low on-state resistance Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16V, VGS = 10 V) Built-in gate protection diode Surface mount device available +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 + |
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Guangdong Kexin Industrial |
MOSFET Super low on-state resistance: RDS(on)1 = 31 m RDS(on)2 = 36 m MAX. (VGS = 10 V, ID = 25A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 25 A) Low Ciss: Ciss = 3600 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 |
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Guangdong Kexin Industrial |
MOSFET Super low on-state resistance: RDS(on)1 = 50 m RDS(on)2 = 58 m MAX. (VGS = 10 V, ID = 15A) +0.2 8.7-0.2 +0.1 1.27-0.1 www.DataSheet4U.com MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. (VGS = 4.5 V, ID = 15 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0 |
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Desde 2024. D4U Semiconductor.
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