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Guangdong Kexin Industrial |
NPN Silicon Epitaxial Transistor High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipatio |
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Guangdong Kexin Industrial |
Silicon NPN Transistor High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Max |
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Guangdong Kexin Industrial |
NPN Silicon Transistor +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Low output capacitance:Cob=2pF(Typ.) +0.1 1.3-0.1 Low collector saturation voltage: VCE=0.25V(Max.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings |
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Guangdong Kexin Industrial |
NPN Epitaxial Planar Silicon Transistor Very small-sized package High VEBO. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Base current Collector diss |
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Desde 2024. D4U Semiconductor.
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