General Semiconductor FE1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FE1A	General Semiconductor	GLASS PASSIVATED FAST EFFICIENT RECTIFIER ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability ♦ Capable of meeting environmental standards of MIL-S-19500 ♦
2	FE1B	General Semiconductor	GLASS PASSIVATED FAST EFFICIENT RECTIFIER ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability ♦ Capable of meeting environmental standards of MIL-S-19500 ♦
3	FE1C	General Semiconductor	GLASS PASSIVATED FAST EFFICIENT RECTIFIER ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability ♦ Capable of meeting environmental standards of MIL-S-19500 ♦
4	FE1D	General Semiconductor	GLASS PASSIVATED FAST EFFICIENT RECTIFIER ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability ♦ Capable of meeting environmental standards of MIL-S-19500 ♦