| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier Continuous Junction and Storage Temperature Range -45 -50 -5 -500 -55 to +150 V V V mA °C © 2002 Fairchild Semiconductor Corporation BCX17 Rev. 1.1.0 1 www.fairchildsemi.com BCX17 — PNP General-Purpose Amplifier Thermal Characteristics Values |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) aracteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 15 |
|
|
|
|
Siemens Semiconductor Group |
PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage) racteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V |
|
|
|
|
Siemens Semiconductor Group |
PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) X 42 BSS 63 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 42 BSS 63 Collector-base breakdown voltage1) IC = 100 µA BCX 42 BSS 63 Emit |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High collector current) 5.91 BCX 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE |
|
|
|
|
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For general AF applications High collector current) 5.91 BCX 69 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE |
|
|
|
|
General Semiconductor |
NPN Transistor • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage. • As complementary types, BCX71 Series PNP transisto |
|
|
|
|
General Semiconductor |
Small Signal Transistor (NPN) • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage. • As complementary types, BCX71 Series PNP transisto |
|
|
|
|
General Semiconductor |
Small Signal Transistor • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage. • As complementary types, BCX71 Series PNP transisto |
|
|
|
|
General Semiconductor |
NPN Transistor • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage. • As complementary types, BCX71 Series PNP transisto |
|
|
|
|
ON Semiconductor |
General Purpose Transistors 0) 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com 3 1 2 CASE 318 −08, STYLE 6 SOT−23 (TO −236) COLLECTOR 3 1 BASE 2 EMITTER Symbol Min V(BR)CEO V(BR)EBO ICES IEBO 45 5.0 — — — Max Unit — Vd |
|
|
|
|
General Semiconductor |
NPN Transistor • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage. • As complementary types, BCX71 Series PNP transisto |
|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BCX79 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation BCX79 PNP General Purpose Ampl |
|
|
|
|
ON Semiconductor |
General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Colle |
|
Desde 2024. D4U Semiconductor.
|