GTM GS2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GS228U	GTM	SWITCHING DIODE m Instantaneous Forward Voltage Maximum Average Reverse Current 2. ESD sensitive product handling required. Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt. 1/2 ISSUED DATE :2004/09/24 REVISED DATE : Characteristics Curve I
2	GS2N7002K	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Package Outline *RoHS Compliant Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.
3	GS204U	GTM	SWITCHING DIODE Instantaneous Forward Voltage Maximum Average Reverse Current 2. ESD sensitive product handling required. Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt. 1/2 ISSUED DATE :2004/09/24 REVISED DATE : Characteristics Curve Im
4	GS2N7002	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Symbol BVDSS VGS(th) IGSS IDSS ID(ON) Static Drain-Source on-State Resistance RDS(ON) Forward Transconductance