| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
GTM |
NPN EPITAXIAL TRANSISTOR MHz Test Conditions 1/2 ISSUED DATE :2005/02/25 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to ma |
|
|
|
|
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Pa |
|
|
|
|
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Pa |
|
|
|
|
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET *Low On-State Resistance:0.3Ө(max) *Ultra High Speed Switching Applications *Notebook PCs *Cellular and portable phones *On-board power supplies *Li-ion battery System Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-S |
|
|
|
|
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0. |
|
Desde 2024. D4U Semiconductor.
|