GTM GM5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GM5551	GTM	NPN EPITAXIAL PLANAR TRANSISTOR IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IE=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz Test Conditions www.DataSheet4U.com 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in
2	GM5401	GTM	PNP EPITAXIAL PLANAR TRANSISTOR =0 VEB=-5V , IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz Test Conditions www.DataSheet4U.com Characteristics Curve
3	GM5824	GTM	NPN SILICON EPITAXIAL PLANAR TRANSISTOR ISSUED DATE :2006/03/10 REVISED DATE : N P N S I L I C O N E P I TA X I A L P L A N A R T R A N S I S T O R The GM5824 is designed for high speed switching and low frequency amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturat