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STMicroelectronics |
short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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Hunteck |
100V N-Ch Power MOSFET ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Sp |
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Vishay |
Glass Passivated Junction Fast Switching Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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CT Micro |
SMD Type Green Emitter Side view 0602 package Viewing Angle = 600 Compatible with infrared and vapor phase reflow solder process High reliability Ultra bright Green RoHS compliance Applications Optical indicator. Switch and Symbol Display. GP160306-CSC3 S |
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Sharp Electrionic Components |
OPIC Photointerrupter with Connector 1. Uses 3-pin connector terminal 2. High sensing accuracy ( Slit width : 0.5mm ) 3. Wide gap between light emitter and detector ( 5mm ) OPIC Photointerrupter with Connector s Applications 1. Copiers, Printers 2. Facsimiles * “ OPIC ” ( Optical IC ) |
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Goodpoly |
PPTC Thermistors evice will trip at 25¡æ under specified condition. Imax£¨ A£© £º Maximum fault current device can withstand without damage at rated voltage. TT£¨ S£© £º Maximum time to trip at specified current. (Devices tested at 40A.The others tested at 5IH) IH£¨ |
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EGmicro |
Inverter power board manual .7Ω R12 10K SD V3 G V4 L1 D4 1N4148 R13 4.7Ω R15 10K V5 G SD D5 1N4148 R14 V6 4.7Ω R16 10K V7 G SD C14 C15 104/CBB 104/CBB V8 0R.117Ω 0R.118Ω 0R.119Ω 0R.210Ω 2‐1. EGP1000W FR107 D207 R3 100K FR107 D206 U3FR107 D208 FR107 D205 P6 |
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Sharp Electrionic |
Compact Transmissive Photointerrupter 1. Transmissive with phototransistor output 2. Highlights : • Compact Size • Low Profile • Narrow Gap • Through-hole : GP1S196HCZ0F • SMT : GP1S196HCZSF 3. Key Parameters : • Gap Width : 1.1mm • Slit Width (detector side): 0.3mm • Package : 3.1×2×2.7m |
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Sharp |
Compact Transmissive Photointerrupter 1. Transmissive with phototransistor output 2. Highlights : ・Special position hooks compatible with 3 different Plate thicknesses (1.0, 1.2, 1.6mm) ・Snap insertion 3. Key Parameters : ・Gap Width : 5mm ・Slit Width (detector side) : 0.5mm ・Package : 17 |
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Thinki Semiconductor |
16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes Glass passivated chip junction Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Soun |
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DIOTEC |
1 AMP HIGH RELIABILITY FAST RECOVERY DIODES MECHANICAL SPECIFICATION R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) |
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Infineon |
IGBT ltage Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Marking Code Package G1 |
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Vishay |
Aluminum Capacitor • Temperature range -55 °C to +105 °C • Long life Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case size Ø D x L in mm 0.625" x 1.125 |
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General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ 1.0 Ampere op |
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General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ 1.5 Ampere op |
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Sharp Electrionic Components |
OPIC Photointerrupter with Encoder Functions 1. 2-phase ( A, B ) digital output 2. Sensing accuracy ( GP1A70R Disk slit pitch : 1.14mm ) ( GP1A71R Disk slit pitch : 0.7mm ) 3. PWB mounting type ( Lead bending type ) 4. TTL compatible output 5. Compact, lightweight OPIC Photointerrupter with En |
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Sharp Electrionic Components |
WIDE GAP HIGH SENSING ACCURACY TYPE PHOTOINTERRUPTER |
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Sharp Electrionic Components |
Anti Electromagnetic Induction Noise Type Compact IR Detecting Unit for Remote Control 1. Anti electromagnetic induction noise type 2. Compact (case volume) (GP1U28Q : About 1/4 compared with GP1U78Q) 3. Power filter capacitor and resistance are not required any more as a result of adoption of built-in constant voltage circuit 4. Vario |
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Sharp Electrionic Components |
Compact IR Detecting Unit for Remote Control 1. Compact (case volume) (GP1U28Y : About 1/4 compared with GP1U58Y) 2. Height from PWB to detector face same as GP1U58Y 3. Power filter capacitor and resistance are not required any more as a result of adoption of built-in constant voltage circuit 4 |
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Sharp Electrionic Components |
IR Detecting Unit For Remote Control 1. Less sensitive to fluorescent lamp driven by inverter 2. Various B.P.F ( Band Pass Filter ) frequency 3. Built-in voltage regulator circuit IR Detecting Unit For Remote Control s Outline Dimensions 16 1.3 14.5MAX g1 4.6 ± 0.5 1.3 2.5 5.1 3 2 1 3 |
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Desde 2024. D4U Semiconductor.
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