| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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GME |
Schottky Barrier Rectifier z Mwtal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Prote |
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GME |
Schottky Barrier Rectifier z Mwtal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Prote |
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GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction with Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For use in low voltage,high frequency Inverters,free wheeling,and polarity prot |
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GME |
Schottky Barrier Rectifier z Mwtal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Prote |
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|
GME |
Schottky Barrier Rectifier z Metal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Prote |
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|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protec |
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|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protec |
|
|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protec |
|
|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
|
|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protec |
|
|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Prote |
|
|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
|
|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
|
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|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protec |
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|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protec |
|
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|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
|
|
|
|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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|
GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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Desde 2024. D4U Semiconductor.
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