GME MMB Hoja de datos

No.	parte #	Fabricante	Descripción
1	MMBT4403	GME	PNP General Purpose Transistor z Epitaxial planar die construction. z Complementary NPN type available Pb Lead-free (MMBT4401). z Also available in lead free version. z Ideal for medium power amplification and switching. z MSL 1 APPLICATIONS z Ideal for medium power amplific
2	MMBT4401	GME	NPN Silicon Epitaxial Planar Transistor  Epitaxial planar die construction.  Complementary PNP type available: Pb Lead-free MMBT4403.  Ideal for medium power amplification and switching.  MSL 1 APPLICATIONS  General purpose application, switching application. MMBT4401 SOT-23 OR
3	MMBT5401	GME	NPN General Purpose Transistor  Epitaxial planar die construction.  Complementary NPN type available (MMBT5551).  Also available in lead free version. Pb Lead-free MMBT5401 APPLICATIONS  Ideal for medium power amplification and switching ORDERING INFORMATION Type No. Mar
4	MMB4G	GME	SILICON BRIDGE RECTIFIERS z Glass：passivated chip junctions z High surge overload rating: 30A peak Pb Lead-free z Saves space on printed circuit boards z High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension MECHANICAL DATA z Case: Molded plas
5	MMBD717	GME	Schottky Barrier Diode  Extremely fast switching speed.  Extremely low forward voltage- 0.28V(Typ)@IF=1mA.  Common anode. Pb Lead-free MMBD717 APPLICATIONS  High speed switching application ,circuit protection and voltage clamping. SOT-323 ORDERING INFORMATION Ty
6	MMBD4148M	GME	Surface mount switching diode z Fast switching speed. z High conductance. Pb Lead-free z For general purpose switching applications. z Surface mount package ideally suited for automatic insertion. APPLICATIONS z Small signal switching. ORDERING INFORMATION Type No. Markin
7	MMBD914	GME	High-speed switching diode z Fast switching speed. Pb z Surface mount package ideally suited Lead-free for automatic insertion. z For general purpose switching appilications. z High conductance. APPLICATIONS z High speed switching. MMBD914 SOT-23 ORDERING INFORMATION
8	MMBT5088	GME	Silicon Epitaxial Planar Transistor z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50mA. ORDERING INFORMATIO
9	MMBD2838	GME	Surface mount switching diode z High speed switching: trr=3.0ns(max) z Low capacitance: CT=1.1pF(typ.) APPLICATIONS z Small signal switching Production specification MMBD2837/MMBD2838 Pb Lead-free ORDERING INFORMATION Type No. Marking MMBD2837 MMBD2838 A5 A61 SOT-23 Packag
10	MMBT2222A	GME	NPN Amplifier  Epitaxial planar die construction.  Complementary PNP type available Pb Lead-free MMBT2907A.  Ultra-small surface mount package.  MSL 1 APPLICATIONS  Use as a medium power amplifier.  Switching requiring collector currents up to 500mA.
11	MMB10G	GME	SILICON BRIDGE RECTIFIERS z Glass：passivated chip junctions z High surge overload rating: 30A peak Pb Lead-free z Saves space on printed circuit boards z High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension MECHANICAL DATA z Case: Molded plas
12	MMB1G	GME	SILICON BRIDGE RECTIFIERS z Glass：passivated chip junctions z High surge overload rating: 30A peak Pb Lead-free z Saves space on printed circuit boards z High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension MECHANICAL DATA z Case: Molded plas
13	MMBD355	GME	Dual Hot Carrier Mixer Diodes z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD
14	MMBT589	GME	PNP General Purpose Transistor  Epitaxial planar die construction.  Also available in lead free version. Pb Lead-free APPLICATIONS  High current surface mount PNP silicon switching transistor for load management in portable appilications. Production specification MMBT589 OR
15	MMBTA05	GME	NPN General Purpose Transistor  High breakdown voltage.  Complementary PNP type available Pb Lead-free (MMBTA55/MMBTA56).  Low collector-emitter saturation voltage. APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking
16	MMBTA13	GME	NPN Darlington Amplifier Transistor  Epitaxial planar die construction.  Complementary PNP type available Pb Lead-free (MMBTA63/MMBTA64).  High current gain.  MSL 1 APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMB
17	MMBD1501A	GME	High conductance low leakage diode  Two element incorporated Pb into one package. Lead-free (Emitter-coupled transistors)  Reduction of the mounting area and assembly cost by one half. MMBD1501A MMBD1503A APPLICATIONS  For general application. MMBD1504A MMBD1505A ORDERI
18	MMBD1504A	GME	High conductance low leakage diode  Two element incorporated Pb into one package. Lead-free (Emitter-coupled transistors)  Reduction of the mounting area and assembly cost by one half. MMBD1501A MMBD1503A APPLICATIONS  For general application. MMBD1504A MMBD1505A ORDERI
19	MMBD7000	GME	Surface mount switching diode  For high-speed switching appilication.  Connected in series. Pb Lead-free APPLICATIONS  High speed switching application. Production specification MMBD7000 ORDERING INFORMATION Type No. Marking MMBD7000 M5C SOT-23 Package Code SOT-23 MA
20	MMBD6100	GME	Surface mount switching diode z High conductance. z Fast switching. Pb Lead-free z Surface mount package ideally suited for automatic insertion. MMBD6100 APPLICATIONS z For general purpose and switching application. SOT-23 ORDERING INFORMATION Type No. Marking MMBD6100