GME KTD Hoja de datos

No.	parte #	Fabricante	Descripción
1	KTD1624	GME	NPN Silicon Epitaxial Planar Transistor Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fast switching speed.  Large current capacity and wide ASO.  Complementary: KTB1124. Production specification KTD1624 ORDERING INFORMATION Type No
2	KTD1304	GME	NPN Silicon Epitaxial Planar Transistor z High emitter-base voltage. z High reverse hFE. z Low on resistance. Pb Lead-free APPLICATIONS z Audio muting application. Production specification KTD1304 ORDERING INFORMATION Type No. Marking KTD1304 MAX SOT-23 Package Code SOT-23 MAXIMU
3	KTD1898	GME	Power Transistor z High VCEO,VCEO=80V. z High IC,IC=1A(DC). z Good HFE Linearity. z Low VCE(sat). z Complement the 2SB1260. Pb Lead-free KTD1898 APPLICATIONS z NPN silicon transistor. ORDERING INFORMATION Type No. Marking KTD1898 DF SOT-89 Package Code SOT-8