GME BSS Hoja de datos

No.	parte #	Fabricante	Descripción
1	PBSS4160T	GME	NPN Low VCEsat Transistor z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat generation z Reduces printed-circuit board area required PBSS4160T APPLICATIONS z Major application s
2	BSS8402DW	GME	MOSFET  Low On-Resistance.  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Low Input/Output Leakage.  Complementary Pair. Pb Lead-free SOT-363 ORDERING INFORMATION Type No. Marking BSS8402DW KNP Package Code SOT-36
3	BSS84	GME	P-Channel Vertical D-MOS Transistor  Voltage controlled p-channel small Pb signal switch Lead-free  High density cell design for low RDS(ON)  High saturation current APPLICATIONS  Line current interrupter in telephone sets  Relay,high speed and line transformer drivers ORD
4	BSS84W	GME	P-Channel Power Mosfet  Low On-Resistance。  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Available in Lead Free Version. Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor. ORDERING INFORMATION Type No. Marking
5	PBSS5160T	GME	PNP Transistor z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z Reduces printed-circuit board area required Pb Lead-free PBSS5160T APPLICATIONS z Major application segme