GME 3DD Hoja de datos

No.	parte #	Fabricante	Descripción
1	3DD13001	GME	High Voltage Fast Switching NPN Power Transistor  PC=350mW(Mounted on ceramic substrate). Pb  High speed switching. Lead-free  Small flat package. APPLICATIONS  High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13001 13001 SOT-23 Package Code SOT-23 MAXI
2	3DD13002	GME	High Voltage Fast Switching NPN Power Transistor  High speed switching.  Small flat package. Pb Lead-free APPLICATIONS  High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13002 13002 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specif
3	3DD13003	GME	High Voltage Fast Switching NPN Power Transistor  PC=1W(Mounted on ceramic substrate).  High speed switching.  Die size:1.34*1.34  Small flat package. Pb Lead-free APPLICATIONS  Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch