| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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GHz Technology |
Class AB Defcom llector to Emitter Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance Ie = 5 mA Ic = 20 mA Ie = 50 mA Vce = 5 V, Ic = 1 A 4.0 60 32 240 10 1.2 Volts Volts Volts pF o C/W Issue August 1996 GHz TECHNO |
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GHz Technology |
Class AB Defcom FE θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Collector Leakage Current Output Capacitance DC - Current Gain Thermal Resistance Ie = 5 mA Ic = 20 mA Ie = 50 mA Vce = 5 Volts Vcb = 28 V, F = 1 MHz Vce |
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GHz Technology |
Class AB Defcom er Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance Ie = 5 mA Ic = 20 mA Ie = 50 mA Vcb = 28 V, F = 1 MHz Vce = 5 V, Ic = 1 mA 4.0 60 32 75 10 2.0 Volts Volts Volts pF o C/W Issue August 1996 GHz |
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Desde 2024. D4U Semiconductor.
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