No. | parte # | Fabricante | Descripción | Hoja de Datos |
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GFO |
MOSFET � VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Speci |
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