| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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GFD |
MOSFET � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special |
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Desde 2024. D4U Semiconductor.
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