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GE |
FIELD EFFECT POWER TRANSISTOR • Directly drives inductive loads • High speed, high peak current switching • Inherent current sharing capability when paralleled • Directly interfaces to CMOS, DTL, TTL logic • Simple straight-f |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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Desde 2024. D4U Semiconductor.
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