| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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DBIC |
8 channel LED large screen scanning blanking control circuit e phenomenon of LED leakage and short-circuit, caterpillar Built in short circuit protection, over current protection circuit D7258 using SOP - 16 package Package: SOP-16 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 Note: Note: Pin1 and pin9 |
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Renesas |
USB3.0 to SATA3 BRIDGE CONTROLLER z Compliant with Universal Serial Bus 3.0 Specification Revision 1.0 ¾ Certified by USB Implementers Forum (TID: 340000093) ¾ Supports Super/High-/Full-speed ¾ Supports Mass Storage Class UASP (USB Attached SCSI Protocol) ¾ Supports Mass Storage Clas |
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Renesas |
USB3.0 to SATA3 BRIDGE CONTROLLER User Hardware Manual |
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NEC |
Intelligent Gpib Controller |
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INCHANGE |
NPN Transistor fied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V ICES Collector Cutoff Current VCE= |
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INCHANGE |
PNP Transistor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= |
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NEC |
USB2.0 to IDE Bridge • Compliant with Universal Serial Bus Specification Revision 2.0 (Data Rate 12/480 Mbps) • Compliant with ATA/ATAPI-6 (LBA48, PIO Mode 0-4, Multi Word DMA Mode 0-2, Ultra DMA Mode 0-4) • USB2.0 high-speed bus powered device capability • Certified by |
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Other |
GENERAL PURPOSE INTERFACE BUS-INTERFACE CONTROLLER REQUEST T/R1 - T/R3 : TRANSMIT/RECEIVE CONTROL INPUT/OUTPUT ATN : ATTENTION D0 - D7 : DATA BUS DAV : DATA VALID DIO1 - DIO8 : DATA EOI : END OR IDENTIFY IFC : INTERFACE CLEAR NDAC : NOT DATA ACCEPTED NRED : NOT READY FOR DATA REN : REMOTE ENABLE SRQ |
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NEC |
Intelligent Gpib Controller |
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INCHANGE |
Silicon NPN Power Transistor A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 0.1A; VC |
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AND |
Intelligent Character Display • RoHS Compliant • AND721GST: Super Twist Technology • AND721GST-LED: STN with LED backlight • Low voltage, +5V single power supply • Controller on board (HD44780) • RoHS compliant • 11 commands for control • Wide temperature range option (WGST) A |
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AND |
Intelligent Character Display • RoHS Compliant • AND721GST: Super Twist Technology • AND721GST-LED: STN with LED backlight • Low voltage, +5V single power supply • Controller on board (HD44780) • RoHS compliant • 11 commands for control • Wide temperature range option (WGST) A |
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Leadtrend |
Photoflash Capacitor Charger • Adjustable Charging Current • Adjustable Output Voltage • Supports Auto Refresh • 1.8V~5V Battery Voltage Range • Internal Soft Start • Tiny Transformer • Totem-Pole IGBT Driver Applications • DSC Flash Unit • Film Camera Flash Unit g Patented Ty |
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Leadtrend |
Photoflash Capacitor Charger • Adjustable Charging Current and Output Voltage • 1.8V~5V Battery Voltage Range • Tiny Transformer • Totem-Pole IGBT Driver • Integrated 45V power switch • Output Voltage Overcharge Protection Applications • DSC Flash Unit • Cell Phone with Camera |
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Leadtrend |
Photoflash Capacitor Charger • Adjustable Charging Current • Adjustable Output Voltage • 1.8V~5V Battery Voltage Range • Internal Soft Start • Tiny Transformer • Totem-Pole IGBT Driver Applications • DSC Flash Unit • Film Camera Flash Unit g Patent pending Typical Application |
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Leadtrend |
Highly-Integrated 6-Channel DC/DC Power Management IC internal compensation to minimize external component count. For the complete protection, the LD7242 provides over current protection, over/under voltage protection, and thermal shutdown protection. The LD7242 can operate in 1-cell lithium-ion (Li+) |
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NEC |
PCI Express - PCI/PCI-X Bridge .........................................................................................................................5 2. Block Diagram .............................................................................................................. |
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GE |
NPN POWER TRANSISTOR • High DC Current Gain : hFE(1) =2000(Min.) (VCE =2V, IC =1A) • Low Saturation Voltage : VCE(sat) = 1.5V (Max.) (IC = 3A) • Complementary to D73FY4D1,2 • Suffix "2" designates lead formed version • See page 840 for mounting and handling consideratio |
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INCHANGE |
NPN Transistor IN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 130 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Satura |
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INCHANGE |
NPN Transistor ge IC= 5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.8A ICBO Collector Cutoff Current VCB=1500V;IB= 0 IEBO Emitter Cutoff Current VEB= 10V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; |
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Desde 2024. D4U Semiconductor.
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