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Inchange Semiconductor |
N-Channel Mosfet Transistor ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc |
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Fairchild Semiconductor |
NPN General Purpose Amplifier operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCEO VCBO VEBO IC TJ, Tstg(2) Collector-Emitter Voltage Colle |
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CDIL |
(2N5415 / 2N5416) PNP SILICON HIGH VOLTAGE TRANSISTOR RMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) 150 ºC/W 17.5 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCEO(sus)* IC=50m |
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Inchange Semiconductor |
Silicon PNP Power Transistor Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitte |
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ETC |
0.5AMP HIGH VOLTAGE NPN TRANSISTOR |
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UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - 2N5551G-x-AB3-R SOT-89 2N5551L-x-T92-B 2N5551G- |
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INCHANGE |
N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications FD |
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Fairchild Semiconductor |
PNP General Purpose Amplifier Condition IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 VCB = -10V, IE = 0 VCB = -35V, IE = 0 VEB = -3.0V, IC = 0 IC = -100µA, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V VCE(sat) VBE(on) fT Ccb hfe NF Collector-Emitter Saturation Voltage |
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Motorola |
PNP germanium power transistors limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter short. ,2 . .. , •0 20 3D COLUCTONMlml VOLTAGE (VOLTS |
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ETC |
GERMANIUM PNP POWER TRANSISTORS |
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Inchange Semiconductor |
(2N5038 / 2N5039) Silicon NPN Power Transistors PN Power Transistors 2N5038 2N5039 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VC |
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INCHANGE |
NPN Transistor ademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage |
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Motorola |
PNP germanium power transistors limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter short. ,2 . .. , •0 20 3D COLUCTONMlml VOLTAGE (VOLTS |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Motorola |
GENERAL PURPOSE TRANSISTOR |
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Philips |
PNP high-voltage transistors • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complements: 2N5550 and 2N555 |
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TRANSYS Electronics Limited |
(2N5679 - 2N5682) PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 0V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V uA uA uA uA uA uA Emitter-Cut off Cur |
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NXP |
NPN general purpose transistor • Low current (max. 100 mA) • Low voltage (max. 30 V). APPLICATIONS • Low noise stages in audio equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N5087. 1 handbook, halfpage 2N5088 PINNING PIN 1 2 3 collector |
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Fairchild Semiconductor |
PNP General Purpose Amplifier ndwidth Product IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -120V, IE=0 VEB= -3V, IC=0 IC= -1mA, VCE= -5V IC= -10mA, VCE= -5V IC= -50mA, VCE= -5V IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, VCE |
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Fairchild Semiconductor |
P-Channel General Purpose Amplifier nless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5460 625 5.0 83.3 200 Max *MMBF5460 350 2.8 357 Units mW mW/°C °C/W °C/W *Device mounte |
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Desde 2024. D4U Semiconductor.
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