| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fujitsu |
UV Erasable ROM |
|
|
|
|
Fujitsu |
NMOS Universal Peripheral Interface 8-Bit Microcomputer • Processo |
|
|
|
|
Fujitsu Media Devices Limited |
SILICON DARLINGTON TRANSISTOR ARRAY |
|
|
|
|
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM ax. (Active) 138 mW max. (Standby, TTL level) 83 mW max. (Standby, CMOS level) • Single +5 V power supply ±1 0% tolerance • TTL compatible inputs and outputs • Three-state outputs w~h OR-tie capac~y • Chip select for simplified memory expansion, a |
|
|
|
|
Fujitsu |
UV Erasable ROM |
|
|
|
|
Fujitsu |
Silicon High Speed Power Transistor |
|
|
|
|
Fujitsu |
MINIATURE RELAY l Ultra high sensitivity (75 to 150 mW) Dl High reliability-bifurcated contacts l Conforms to FCC rules and regulations Part 68 I —Dielectric strength 1,500 VAC between coil and contacts S —Surge strength 1,500 V l UL, CSA recognized Cl Wide operati |
|
|
|
|
Fujitsu Media Devices |
4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F643242C SDRAM is designed to reduce the complexi |
|
|
|
|
Fujitsu |
4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642C SDRAM is designed to reduce the complexi |
|
|
|
|
Fujitsu |
MOS DRAM |
|
|
|
|
Fujitsu Media Devices |
DUAL COMPARATOR • Wide power supply voltage range Single power supply – – – 2V to 30V Dual power supplies – – – ±1V to ±15V • Wide input common-mode voltage range 0V to (VCC – 1.5)V • Low input bias current – – – 25nA typ. • High sink current capability because of open co |
|
|
|
|
Fujitsu |
Graphics Display Controller ......................................................................................................................................... 1-1 1.2. LIMITATIONS .......................................................................................... |
|
|
|
|
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM uts • Three-state outputs w~h OR-tie capacity • Chip select for simplified memory expansion • Electrostatic protection for all inputs and outputs • Standard 20-pin Plastic Package: DIP MB81 C69A-xxP • Standard 20-pad Ceramic Package: LCC MB81C69A |
|
|
|
|
Fujitsu |
CMOS SRAM |
|
|
|
|
Fujitsu |
CMOS 256K bit Low Power SRAM |
|
|
|
|
Fujitsu |
4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642C SDRAM is designed to reduce the complexi |
|
|
|
|
Fujitsu |
CMOS 72K-BIT HIGH-SPEED SRAM 5 ns max. A11, A12 aocesstime -15 ns max. {MB81C79B-45) • Low power consumption: 550 mW max. (Operation) 138 mW max. (TTL Standby) 83 mW max. (CMOS Standby) • Single +5 V power supply ±1 0% tolerance • TTL compatible inputs and outputs • Three-st |
|
|
|
|
Fujitsu |
CMOS 16384-Bit Static RAM |
|
|
|
|
Fujitsu |
CMOS SRAM |
|
|
|
|
Fujitsu |
NMOS Universal Peripheral Interface 8-Bit Microcomputer • Processor: 8-bit parallel processing • Register: One 8-bit Status Register (for Interface with master process |
|
Desde 2024. D4U Semiconductor.
|