| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fujitsu Media Devices |
2M (256K x 8/128K x 16) BIT FLASH MEMORY • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFT |
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Fujitsu Media Devices |
8M (1M X 8/512K X 16) BIT • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFT |
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Fujitsu Media Devices |
16M (2M x 8/1M x 16) BIT FLASH MEMORY • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with MASK ROM pinouts 48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Typ |
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Fujitsu Media Devices |
32M (4M X 8/2M X 16) BIT Dual Operation -80/90/12 • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read f |
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Fujitsu Media Devices |
4M (512K X 8) BIT • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN |
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Fujitsu Media Devices |
1M (128K x 8) BIT • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 32-pin TSOP(I) (Package suffix: PFT |
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Fujitsu Media Devices |
(MBM29FS12DH / MBM29BS12DH) BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The Enhanced VI/O (VCCQ) feature allows the output voltage generated on |
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Fujitsu Media Devices |
16M (2M x 8) BIT FLASH MEMORY • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC |
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Fujitsu Media Devices |
2M (256K x 8) BIT FLASH MEMORY • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN |
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Fujitsu Media Devices |
1M (128K x 8) BIT FLASH MEMORY • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 32-pin TSOP(I) (Package suffix: PFT |
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Fujitsu Media Devices |
MBM29LV160BE a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory. The device features single 3.0 V power supply operation for bo |
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Fujitsu Media Devices |
8M (1M x 8) BIT FLASH MEMORY • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection 48-pin TSOP(I) (Package Suff |
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Fujitsu Media Devices |
(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can progr |
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Fujitsu Media Devices |
MBM29LV400BC • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFT |
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Fujitsu Media Devices |
MBM29LV160TE90TN a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory. The device features single 3.0 V power supply operation for bo |
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Fujitsu Media Devices |
MBM29LV160BE a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory. The device features single 3.0 V power supply operation for bo |
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Fujitsu Media Devices |
4M (512K x 8/256K x 16) BIT FLASH MEMORY • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (Package suffix: PFTN – N |
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Fujitsu Media Devices |
4M (512K X 8/256K X 16) BIT • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (Package suffix: PFTN – N |
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Fujitsu Media Devices |
BURST MODE FLASH MEMORY CMOS 32M (2M x 16) BIT a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The Enhanced VI/O (VCCQ) feature allows the output voltage generated on |
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Fujitsu Media Devices |
(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can progr |
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Desde 2024. D4U Semiconductor.
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