Fuji Electric FMR Hoja de datos

No.	parte #	Fabricante	Descripción
1	FMR23N60E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
2	FMR19N60E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
3	FMR17N60ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability
4	FMR09N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
5	FMR19N60ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability
6	FMR11N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability