Fuji Electric FMH Hoja de datos

No.	parte #	Fabricante	Descripción
1	09N90E	Fuji Electric	FMH09N90E Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
2	FMH07N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability
3	FMH23N50E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
4	FMH11N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
5	FMH23N50ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability
6	FMH20N50ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit
7	FMH23N60E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durabilit
8	FMH23N60ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit
9	FMH28N50E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durabilit
10	FMH28N50ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit
11	FMH47N60S1	Fuji Electric	N-Channel enhancement mode power MOSFET Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 1.5±0.2 4.5±0.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2 1.6 +0.3 -0.1
12	FMH47N60S1FD	Fuji Electric	N-Channel MOSFET Pb-free lead terminal RoHS compliant Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 41..55±± 00..22 14.5.5±±00.2.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 Applications For switching 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2
13	FMH06N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability
14	FMH09N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
15	FMH13N60ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET FMH13N60ES Outline Drawings [mm] TO-3P(Q) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance
16	FMH17N60ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit
17	FMH19N60ES	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit
18	FMH20N50E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durabilit
19	FMH30N60S1	Fuji Electric	N-Channel enhancement mode power MOSFET Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 1.5±0.2 4.5±0.2
20	FMH40N60S1FD	Fuji Electric	N-Channel MOSFET Pb-free lead terminal RoHS compliant Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 41..55±± 00..22 14.5.5±±00.2.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 Applications For switching 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2