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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durabilit |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-247-P2 Equivalent circuit schematic Applications UPS Server Telecom |
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Fuji Electric |
N-Channel enhancement mode power MOSFET Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Outline Drawings [mm] TO-220 3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2 Applications UPS Server Telecom Power conditioner system Power supply 3.6 ±0.2 13.5 |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durabilit |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit |
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Fuji Electric |
IGBT |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durabilit |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durabilit |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220 П3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2 2.7 ±0.1 6.4 ±0.2 15 ± 0.2 3.6 ±0.2 13.5 min. 1.2 ± 0.2 1 2.54 ± 0.2 23 0.8 +0.2 -0.1 2.54± 0.2 PRE-SOLDER |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-3P(Q) 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 1.5±0.2 4.5±0.2 1.5 3 ±0.2 19.5 ±0.2 5 ±0.1 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2 1.6 +0.3 -0 |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at TC=25°C (unless |
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Desde 2024. D4U Semiconductor.
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