Fuji Electric 11N Hoja de datos

No.	parte #	Fabricante	Descripción
1	FMH11N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
2	FMV11N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
3	FMR11N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability
4	11N60E	Fuji Electric	FMV11N60E Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
5	FMV11N60E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durabilit