Fuji Electric 09N Hoja de datos

No.	parte #	Fabricante	Descripción
1	09N90E	Fuji Electric	FMH09N90E Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
2	FMV09N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
3	FMH09N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit
4	FMR09N90E	Fuji Electric	N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit