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Freescale |
MOSFETs Silicon P-Channel MOS (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: |
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Desde 2024. D4U Semiconductor.
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