| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Freescale Semiconductor |
Gallium Arsenide CATV Integrated Amplifier • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • RoHS Compliant • In Tape and Reel. T1 |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 40--3600 MHz P1dB: 18.5 dBm @ 900 MHz Small--Signal Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 32 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Cost--effective SOT--89 Surface Mount Plastic |
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Freescale Semiconductor |
Gallium Arsenide CATV Integrated Amplifier • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • In Tape and Reel. R2 Suffix = 1,500 Un |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 40--4000 MHz P1dB: 25 dBm @ 900 MHz Small--Signal Gain: 19.5 dB @ 900 MHz Third Order Output Intercept Point: 40.5 dBm @ 900 MHz Single 5 V Supply Active Bias Cost--effective SOT--89 Surface Mount Plastic Package In Tape an |
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Freescale Semiconductor |
pHEMT Frequency: 1500--2700 MHz Noise Figure: 1.7 dB @ 2140 MHz P1dB: 27.5 dBm @ 2140 MHz Small--Signal Gain: 16 dB @ 2140 MHz Third Order Output Intercept Point: 43.1 dBm @ 2140 MHz Class 2 HBM ESD Immunity Single 5 V Supply Supply Current |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 400--2400 MHz P1dB: 33 dBm @ 900 MHz Small--signal gain: 17.5 dB @ 900 MHz Third order output intercept point: 49 dBm @ 900 MHz Single 5 V supply Internally input prematched to 50 ohms Document Number: MMG3006NT1 Rev. 6, 12/20 |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 0--6000 MHz P1dB: 18.5 dBm @ 900 MHz Small--Signal Gain: 19 dB @ 900 MHz Third Order Output Intercept Point: 34 dBm @ 900 MHz Single 5 V Supply Internally Matched to 50 Ohms Cost--effective SOT--89 Surface Mount Plastic Packa |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 0 to 6000 MHz P1dB: 18 dBm @ 900 MHz Small--Signal Gain: 15 dB @ 900 MHz Third Order Output Intercept Point: 34 dBm @ 900 MHz Single 5 V Supply Internally Matched to 50 Ohms Cost--effective SOT--89 Surface Mount Plastic Packa |
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Freescale Semiconductor |
Gallium Arsenide CATV Integrated Amplifier • Specified for 79 -, 112 - and 132 -Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • In Tape and Ree |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 0 to 6000 MHz P1dB: 16 dBm @ 900 MHz Small--Signal Gain: 19 dB @ 900 MHz Third Order Output Intercept Point: 30 dBm @ 900 MHz Single 5 V Supply Internally Matched to 50 Ohms Cost--effective SOT--89 Surface Mount Plastic Packa |
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Freescale Semiconductor |
pHEMT Frequency: 500--2800 MHz Noise Figure: 1.6 dB @ 2140 MHz P1dB: 24 dBm @ 2140 MHz Small--Signal Gain: 15.9 dB @ 2140 MHz Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz Single 5 V Supply Supply Current: 85 mA 50 Ohm Operation ( |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 40--3600 MHz P1dB: 24 dBm @ 900 MHz Small--Signal Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 40.5 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Cost--effective SOT--89 Surface Mount Plastic |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor |
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Freescale Semiconductor |
Heterojunction Bipolar Transistor Frequency: 0--6000 MHz P1dB: 20.5 dBm @ 900 MHz Small--Signal Gain: 15.5 dB @ 900 MHz Third Order Output Intercept Point: 36 dBm @ 900 MHz Single 5 V Supply Active Bias Control Internally Matched to 50 Ohms Cost--effective SOT--89 Sur |
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Freescale Semiconductor |
pHEMT Frequency: 1500--2700 MHz Noise Figure: 1.7 dB @ 2140 MHz P1dB: 27.5 dBm @ 2140 MHz Small--Signal Gain: 16 dB @ 2140 MHz Third Order Output Intercept Point: 42 dBm @ 2140 MHz Single 5 V Supply Supply Current: 180 mA 50 Ohm Operation ( |
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Desde 2024. D4U Semiconductor.
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