Freescale Semiconductor MD7 Hoja de datos

No.	parte #	Fabricante	Descripción
1	MD7P19130HR3	Freescale Semiconductor	RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Im
2	MD7P19130HSR3	Freescale Semiconductor	RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Im
3	MD7IC2050NR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • 100% PAR Tested for Guaranteed Output Power Capability • Production Tested in a Symmetrical Doherty Configuration • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 O
4	MD7IC2050GNR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • 100% PAR Tested for Guaranteed Output Power Capability • Production Tested in a Symmetrical Doherty Configuration • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 O
5	MD7IC21100NR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters • On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked) • Internally Match
6	MD7IC21100GNR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters • On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked) • Internally Match
7	MD7IC18120NR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm Input, DC Blocked
8	MD7IC18120GNR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm Input, DC Blocked
9	MD7IC2050NBR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • 100% PAR Tested for Guaranteed Output Power Capability • Production Tested in a Symmetrical Doherty Configuration • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 O
10	MD7IC21100NbR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters • On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked) • Internally Match