No. | parte # | Fabricante | Descripción | Hoja de Datos |
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FreesCale Electronics |
HEXFET Power MOSFET l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0mΩ G S Description Specifically designed for Automo |
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FreesCale Electronics |
HEXFET Power MOSFET l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0mΩ G S Description Specifically designed for Automo |
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FreesCale Electronics |
HEXFET Power MOSFET l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0mΩ G S Description Specifically designed for Automo |
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