No. | parte # | Fabricante | Descripción | Hoja de Datos |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistor GROUND) R2 MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25 C (Note 1.) Derate above 25 C Symbol VCBO VCEO IC PD Value 50 50 100 246 1.5 U |
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First Silicon |
Bias Resistor Transistor GROUND) R2 MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25 C (Note 1.) Derate above 25 C Symbol VCBO VCEO IC PD Value 50 50 100 246 1.5 U |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistor GROUND) R2 MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25 C (Note 1.) Derate above 25 C Symbol VCBO VCEO IC PD Value 50 50 100 246 1.5 U |
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First Silicon |
Bias Resistor Transistor GROUND) R2 MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25 C (Note 1.) Derate above 25 C Symbol VCBO VCEO IC PD Value 50 50 100 246 1.5 U |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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First Silicon |
Bias Resistor Transistors Base Voltage Collector-Emitter Voltage Collector Current VCBO VCEO IC 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25 C Derate above 25 C PD Thermal Resistance – Junction-to-Ambient |
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