First Semiconductor FIR Hoja de datos

No.	parte #	Fabricante	Descripción
1	EF102PG	American First Semiconductor	(EF101PG - EF105PG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Low profile surface mounted application in order to optimize board space. • Trr less than 25ns for high efficiency • High current & surge capability. • Low forward dropdown voltage • Glass passivated chip junction. • Lead-free parts meet environmen
2	UC3844B	American First Semiconductor	Controllers consisting of input and reference undervoltage lockouts each with hysteresis, cycle –by –cycle current limiting, programmable output deadtime, and a latch for single pulse metering. These devices are available in an 8 –pin dual –in –line and surface mount
3	5.0SMCJ100AG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
4	UC3843B	American First Semiconductor	Controllers consisting of input and reference undervoltage lockouts each with hysteresis, cycle –by –cycle current limiting, programmable output deadtime, and a latch for single pulse metering. These devices are available in an 8 –pin dual –in –line and surface mount
5	FMEG102DG	American First Semiconductor	(FMEG101DG - FMEG105DG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • High current capability. • Fa
6	EF104PG	American First Semiconductor	(EF101PG - EF105PG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Low profile surface mounted application in order to optimize board space. • Trr less than 25ns for high efficiency • High current & surge capability. • Low forward dropdown voltage • Glass passivated chip junction. • Lead-free parts meet environmen
7	UC3842B	American First Semiconductor	Controllers consisting of input and reference undervoltage lockouts each with hysteresis, cycle –by –cycle current limiting, programmable output deadtime, and a latch for single pulse metering. These devices are available in an 8 –pin dual –in –line and surface mount
8	54F413	National Semiconductor	64 x 4 First-In First-Out Buffer Memory Y Separate input and output clocks Y Parallel input and output Y Expandable without external logic Y 15 MHz data rate Y Supply current 160 mA max Y Available in SOIC (300 mil only) Commercial 74F413PC Military 54F413DM (Note 1) Package Number N16E
9	5.0SMCJ110AG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
10	5.0SMCJ11CAG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
11	FFM103G	American First Semiconductor	(FFM101G - FFM107G) 1.0A Surface Mount Fast Recovery Rectifiers • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Fast switching for high efficie
12	FMEG103DG	American First Semiconductor	(FMEG101DG - FMEG105DG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • High current capability. • Fa
13	MBR340NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
14	MBR3150NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
15	5.0SMCJ120CAG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
16	5.0SMCJ110CAG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
17	5.0SMCJ100CAG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
18	5.0SMCJ120AG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
19	5.0SMCJ11AG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional
20	5.0SMCJ22CAG	First Semiconductor	SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional