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Feihong |
N-channel enhancement mode power MOSFET R& VGS 2. 1RWHV 9'6 9 ȝ V 3XOVH 7HVW (V) 4. VSD 1RWHV 9*6 9 ȝV 3XOVH 7HVW (V) |
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Feihong |
N-channel enhancement mode power MOSFET 0 25oC -55oC 10-1 246 VGS 2. ජ Notes : 1. V = 40V DS 2. 250த s Pulse Test 8 (V) 10 101 100 150ඓ 25ඓ 10-1 0.2 0.4 4. 0.6 0.8 VSD ජ Notes : 1. V = 0V GS 2. 250த s Pulse Test 1.0 1.2 1.4 1.6 (V) 3000 2500 2000 1500 1000 500 0 10-1 Ciss = C |
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Desde 2024. D4U Semiconductor.
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