Fairchild Semiconductor U92 Hoja de datos

No.	parte #	Fabricante	Descripción
1	U9224	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 Ω (Typ.) 1 SFR/U9224 BVDSS = -250 V RDS(on) =
2	SFU9220	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 Ω (Typ.) 1 SFR/U9220 BVDSS = -200 V RDS(on) =
3	SFU9224	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 Ω (Typ.) 1 SFR/U9224 BVDSS = -250 V RDS(on) =
4	SFU9210	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 Ω (Typ.) 1 SFR/U9210 BVDSS = -200 V RDS(on) =
5	SFU9214	Fairchild Semiconductor	Advanced Power MOSFET ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Lower RDS(ON) : 3.15 Ω (Typ.) SFR/U9214 BVDSS = -250
6	SFU9230B	Fairchild Semiconductor	200V P-Channel MOSFET • • • • • • -5.4A, -200V, RDS(on) = 0.8Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ G S D-PAK SFR Series I-PAK G D S SFU Series ● !