No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.) SFR/U9120 BVDSS = -100 |
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.) Absolute Maximum Ratin |
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ.) SFR/U9110 BVDSS = -100 |
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 Ω (Typ.) 1 SFR/U9130 BVDSS = -100 V RDS(on) = |
|