| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω |
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Fairchild Semiconductor |
SSW1N60A Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! |
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Fairchild Semiconductor |
520V N-Channel MOSFET • • • • • • 1.5A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D2-PAK SSW Series G D S I2-PAK SSI Series G! |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! |
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Desde 2024. D4U Semiconductor.
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